Select the right Silicon Carbide or IGBT gate driver for your next energy-efficient, robust and compact system design

High efficiency

Boost the efficiency of your design with strong drive currents, high CMTI and short propagation delays of our SiC and IGBT gate drivers.

Advanced protection

• SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a.
• Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. Next Generation SiC MOSFET Features Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR).

Achieve robust isolated systems using our gate drivers with fast integrated short-circuit protection and high surge immunity.

Technical Article FET vs. IGBT: What’s the Right Choice for Your Power Stage Design? March 13, 2017 by Lonne Mays This article will help the reader understand the different types of power semiconductors: how they work, their key parameters, and trade-offs.

Compact solution

Reduce your system size, weight and cost by switching SiC at higher PWM frequencies with our fast, robust and reliable drivers.

UCC21710-Q1

UCC21710-Q1 is a single channel isolated gate driver for SiC/IGBT with high-CMTI and advanced protection .

UCC21750

UCC21750 is a single channel isolated gate driver for SiC/IGBT with high-CMTI, and advanced protection using desaturation.

UCC21530-Q1

Automotive, 4-A, 6-A, 5.7-kVrms isolated dual-channel gate driver with enable

High system efficiency

ISO5852S enables >99% efficiency 10kW grid-tied solar inverter switching at 50kHz.

Robustness

ISO5852S driving, sensing & protecting >100A SiC power modules.

Compact solution

UCC21530 enables 98.5% efficiency 6.6kW totem-pole PFC for EV on-board charger switching at 100kHz.

Featured design resources

IGBT & SiC Gate Driver Fundamentals

Discover solutions to some of the most commonly asked IGBT and SiC gate driver questions. While this e-book goes into further detail, you can jump into the most relevant topics for your design at the right.

• IGBT and SiC power switch fundamentals
  
• IGBT and SiC protection basics
  

Silicon carbide gate drivers – a disruptive technology in power electronics

Silicon carbide cannot realize its full potential without the right ecosystem, in this case, the gate driver. Read about the disruptive technology and how it is impacting power electronics.

Sic Fet

Understanding the short circuit protection for Silicon Carbide MOSFETs

Get to know and compare various short circuit protection methods for SiC MOSFETs.

Enabling high voltage signal isolation quality and reliability

Get to know and understand capacitive isolation as the leading technology to provide robust and reliable solutions.

Featured video

C2000 real-time controllers enable engineers to create more efficient and reliable high power systems. Precision sensing, powerful processing, and premium actuation capabilities specifically designed for high-frequency power control applications.

Sic Fet Vendors List

Learn more about C2000 real-time controllers

Six Fet Unser Song

Checkout TI’s isolation portfolio and find the latest isolation resources here.